Samsung Electronics, a global leader in advanced memory technology, has begun mass production of its ninth-generation one terabit (Tb) triple-level cell (TLC) V-NAND unit, reaffirming its dominant position in the NAND flash market. This new technology, featuring industry-leading bit density, enhances productivity with its innovative double stacked structure and advanced channel hole etching technology.
“We are pleased to announce the industry’s first ninth-generation V-NAND, which will significantly drive future applications. To address the ever-evolving needs of NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next product,” said SungHoi Hur, Product and Technology Head of Samsung Electronics’ Memory Business Flash. “With our latest V-NAND, Samsung will continue to lead the market in high-performance and high-density solid-state drives (SSDs), meeting the demands of the next generation of artificial intelligence.”
Samsung has improved the bit density of the ninth-generation V-NAND by approximately 50% compared to the eighth-generation V-NAND, thanks to the industry’s smaller cell size and thinner mold. Key innovations such as cell interference avoidance and cell life extension have been implemented to enhance product quality and reliability. Additionally, the removal of false channel holes has significantly reduced the planar area of memory cells.
Samsung’s advanced channel hole etching technology, showcasing the company’s process capability superiority, creates electronic paths by stacking mold layers and maximizing manufacturing productivity. This technology becomes crucial as the number of cell layers increases, requiring more sophisticated etching techniques.
Equipped with the next-generation NAND flash interface, Toggle 5.1, the ninth-generation V-NAND supports increased data input/output speeds by 33%, reaching up to 3.2 gigabits per second (Gbps). Along with this new interface, Samsung plans to strengthen its position in the high-performance SSD market by expanding support for PCIe 5.0.
Energy efficiency has also been enhanced by 10% through advances in low-power design compared to the previous generation. As reducing energy usage and carbon emissions become vital for customers, Samsung’s ninth-generation V-NAND is expected to be an optimal solution for future applications.
Samsung has started mass production this month of the ninth-generation one terabit TLC V-NAND, and will release the quad-level cell (QLC) model in the second half of this year.
via: MiMub in Spanish
